平面波输入下海水-海床-结构动力相互作用分析

海洋工程结构的地震反应分析是保证海洋工程结构地震安全的重要环节.由于其所处的复杂环境, 该问题涉及到流固耦合和土-结相互作用.本文基于海水、饱和海床、基岩流固耦合统一计算框架,采用Davidenkov模型和修正的Masing准则考虑饱和海床的非线性,在脉冲SV波垂直入射下, 进行了海域场地和海洋工程结构的动力响应分析. 首先,对比分析了线性自由场和非线性自由场输入情形的海域场地非线性反应,结果表明线性自由场输入时反应不合理,自由场分析和场地分析应该采用相一致的本构模型. 然后,对比分析了海床分别为线性和非线性情形时,海域场地以及海水-海床-结构体系的反应特征. 与线性海床情形相比,非线性对海床反应的影响主要由如下两方面因素控制: 一方面,非线性导致饱和海床模量减小, 饱和海床与基岩间的波阻抗比减小,由基岩到饱和海床间的反射系数和透射系数增加, 导致反应增大; 另一方面,非线性导致阻尼加大, 使海床反应减小. 对于本文算例而言,阻尼对非线性海床结果的影响占主导作用.      

三色圆偏振激光组合脉冲驱动氦原子产生椭圆偏振的阿秒脉冲

我们提出利用频率为ω,3ω和强度较弱的2ω组成的三色圆偏振激光组合脉冲驱动氦原子能够得到椭偏率较大的阿秒脉冲链的一种方法.通过强场近似方法,计算了氦原子在两色和三色圆偏振激光组合脉冲驱动下发射高次谐波谱及其合成阿秒脉冲链,比较了氦原子(初态为s态)在这两种情况下发射高次谐波谱的特点及其合成阿秒脉冲链椭偏率的大小,结果发现,在反旋的两色ω,3ω激光脉冲基础上加入了频率为2ω的第三色激光脉冲联合作用到氦原子上,所得到的阿秒脉冲链的椭偏率相对于双圆场情况下有所增加,通过调整ω,3ω激光的强度比,并且选择适当的第三色激光的强度,对初态为s态的原子,仍能够得到具有较大椭偏率的阿秒脉冲链.     

双曲冷却塔塔筒水平地震响应分析

为明确冷却塔在水平地震下的内力环向分布特征及内在原因,同时探究不同地震波时程与规范反应谱所得内力差异的原因,以某大型双曲冷却塔为例,在动力特性分析的基础上,通过反应谱方法和时程方法的水平地震响应计算及对比分析,对上述两个问题进行了研究。研究表明:由于仅侧弯振型对水平地震有贡献,而塔筒的侧弯振型和实际响应均表现为整体侧倾并伴随微弱的截面“流动”变形,这也使塔筒各内力的环向分布分别呈现正弦、余弦分布特征;其整体侧倾可类比于悬臂杆结构,塔筒子午向轴力FY、子午向弯矩MY、剪力FXY和扭矩MXY的环向分布可借助悬臂杆侧倾时截面正应力和剪应力分布来解释;而截面“流动”变形则决定了环向轴力FX和环向弯矩MX的环向分布;整体侧移显著而截面变形极小也使FY和FXY的幅值在塔筒中下部明显大于FX;由于冷却塔第1阶侧弯振型在水平地震响应中往往起绝对主导作用,因此可先对所选地震波计算得到其反应谱,对比第1阶侧弯振型周期对应的水平地震影响系数α值,即可初步推断不同时程及规范反应谱方法所得结果的大小关系。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

On-chip multiphoton Greenberger–Horne–Zeilinger state based on integrated frequency combs

One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.     

对史密斯-帕塞尔自由电子激光光栅的研究

为了研究史密斯-帕塞尔自由电子激光的输出频率和光栅槽深、光栅槽长、光栅槽宽的关系,对于基于矩形光栅的史密斯-帕塞尔自由电子激光利用粒子模拟软件进行模拟和理论分析。首先,利用粒子模拟软件模拟对于基于矩形光栅的史密斯-帕塞尔自由电子激光进行了研究,发现史密斯-帕塞尔自由电子激光的输出频率随光栅槽深、光栅槽长、光栅槽宽的增大而减少。接着,对史密斯-帕塞尔自由电子激光的光栅槽进行了理论分析,发现每个光栅槽都可以等效为一个LC谐振电路,并发现在史密斯-帕塞尔自由电子激光中存在两种辐射,一种是史密斯-帕塞尔辐射,另一种是LC振荡辐射。最后,对光栅槽的LC振荡辐射进行了估算,发现史密斯-帕塞尔自由电子激光输出频率的模拟值与光栅槽的LC振荡辐射估算值的数量级均为102 GHz,且变化规律上一致。据此推测决定史密斯-帕塞尔自由电子激光输出频率的应该是光栅槽,而不是谐振腔。     

超音速等离子体炬的磁流体动力学数值研究

针对设计的喉径2mm、工作电流为100A的拉瓦尔喷嘴,在二维轴对称模型的基础上,对超音速等离子体炬中的流动及其外部射流进行了数值模拟。通过在阳极喷嘴内部采用基于磁矢量势的磁流体动力学模型,避免了对磁感应强度的复杂积分计算,得到了喷嘴内部多场耦合的结果及外部射流的流动状态,分析了喷嘴内部电磁场对等离子体的加速作用及射流发展过程。结果显示,等离子体经历了亚音速→跨音速→超音速的发展过程,最终获得2.3 Ma的超音速射流。研究结果为超音速等离子体炬的工业应用提供了理论基础。     

Hitting probabilities and the Hausdorff dimension of the inverse images of a class of anisotropic random fields

Let X = {X(t):t ∈ R~N} be an anisotropic random field with values in R~d.Under certain conditions on X,we establish upper and lower bounds on the hitting probabilities of X in terms of respectively Hausdorff measure and Bessel-Riesz capacity.We also obtain the Hausdorff dimension of its inverse image,and the Hausdorff and packing dimensions of its level sets.These results are applicable to non-linear solutions of stochastic heat equations driven by a white in time and spatially homogeneous Gaussian noise and anisotropic Guassian random fields.     

Microstructure evolution and mechanical property of pulsed laser welded Ni-based superalloy

For evaluating the microstructure evolution and mechanical property of Ni-based Hastelloy C-276 weld joint by the pulsed laser welding, the influence of pulsed laser welding on the microstructure and mechanical property of the weld joint is investigated by the analysis of the microstructure morphology, microhardness, phase structure and tensile property. The results indicate that, in the fusion zone three sections are divided on the basis of the patterns of grain structures. In the weld joint, the element segregation is found, but the trend of brittle phase׳s formation is weakened. The weld microhardness presents just a little higher than that of base metal, and there is no obvious the softened heat affected zone. Meanwhile in the weld joint, the phase structure is still the face-center cubic with the tiny shift of peak positions and widened Full Width at Half-Maximum. The yield strength of weld joint is the same as that of base metal, and the tensile strength is nearly 90% of that of base metal. The decreased tensile strength is mainly attributed to the dislocation piling-up.